Research Areas

Solid state device physics; Characterization of MOS devices and materials. Prof. Trombetta's research has been primarily in the characterization of metal-insulator-semiconductor (MIS) systems, particularly mechanisms of defect generation at the insulator-semiconductor interface. His work has included the ubiquitous SiO2/Si system as well as SiO2/SiC and "high-K" inuslators on Si for appliction in advanced CMOS devices. He has also done work in characterization of III-V semiconductors, including GaAs and AlGaAs, and most recently GaN. He has directed numerous MS theses and PhD dissertations in these areas. He currently collaborates with the Texas Center for Superconductors and Advanced Materials (TcSAM) at UH, as well as with the Prairie View A&M Center for Applied Radiation Research on the radiation response of MOS devices.